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IKQ75N120CS6

INFINEON SP001666624

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INFINEON

IGBT 1200V 75A 1,85V TO247-3
Fabricant: Infineon Technologies
Désignation Produit: IKQ75N120CS6
Rutronik No.: IGBT2490
Unité d'emballage: 1
MOQ: 1
Boitier: TO-247
Packaging: TUBE
En stock
11,57 $
11,57 $

Prix

1 11,57 $
60 10,86 $
90 10,68 $
120 9,88 $

IGBT 1200V 75A 1,85V TO247-3 Description

Description:

Summary of Features

  • High efficiency in hard switching and resonant topologies
  • Low saturation voltage if 1.85 V combined with low switching losses
  • Easy paralleling capability due to positive temperature coefficient in VCEsat
  • Low EMI
  • Low Gate Charge QG
  • Very soft, fast recovery anti-parallel diode
  • High ruggedness, temperature stable behaviour
  • Very tight parameter distribution
  • High power density and low thermal resistance of the TO-247PLUS package

Benefits

  • Lowest losses on IGBT, high system efficiency for higher power output
  • Fast and easy replacement of predecessor H3 technology
  • High device reliability and lifetime expectancy
  • Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
  • Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
  • Kelvin emitter pin brings reduction of total switching losses

Target Applications

  • battery-charger

Paramètres

V(CE)
1200 V
I(C)
75 A
V(CEsat)
1.85 V
Package
TO-247
Bodydiode
YES
P(tot)
880 W
Automotive
NO
t(r)
44 nS
td(off)
300 nS
td(on)
34 nS
Mounting
THT
Leadfree Defin.
4
Technology
Trench
Packaging
TUBE
Référence fabricant
SP001666624
ECCN
EAR99
Numéro du tarif douanier
85412900000
Pays
China
Annuaire ABC
C
Délai de livraison standard
18 Semaines
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