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PD57018-E

ST PD57018-E

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ST

N-CH RF-MOSFET 65V 2,5A PWRSO10
Fabricant: STMicroelectronics
Désignation Produit: PD57018-E
Rutronik No.: THF5296
Unité d'emballage: 50
MOQ: 400
Boitier: PwSO-10RF
Packaging: TUBE

N-CH RF-MOSFET 65V 2,5A PWRSO10 Description

18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package


The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).


Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT = 18 W with 16.5dB gain@945 MHz/28 V
  • New RF plastic package


Paramètres

Polarity
N-CHANNEL
U(cc) max
65 V
Frequency f
945 MHz
P(out)
18 W
Package
PwSO-10RF
Automotive
NO
Leadfree Defin.
10
Packaging
TUBE
ECCN
EAR99
Numéro du tarif douanier
85412900000
Pays
Malaysia
Annuaire ABC
A
Délai de livraison standard
27 Semaines
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